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The physics of heteroepitaxy of 3C–SiC on Si: role of Ge in the optimization of the 3C–SiC/Si heterointerface

  • Published:1999-07 Issue: Volume:61-62 Page:535-538
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Masri P,Moreaud N,Rouhani Laridjani M,Calas J,Averous M,Chaix G,Dollet A,Berjoan R,Dupuy C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality;Crystal Growth & Design;2022-08-22

2. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31

3. Status of 3 C ‐ SiC Growth and Device Technology;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. 3C-SiC grown on Si by using a Si1-xGex buffer layer;Journal of Crystal Growth;2019-08

5. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
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