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3C-SiC grown on Si by using a Si1-xGex buffer layer

  • Published:2019-08 Issue: Volume:519 Page:1-6
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Zimbone M.,Zielinski M.,Barbagiovanni E.G.,Calabretta C.,La Via F.

Funder

European Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Fundamentals of Silicon Carbide Technology Growth, Characterization, Devices, and Applications;Kimoto,2014

2. Silicon Carbide Epitaxy Editor Francesco La Via.

3. Step-controlled epitaxial growth of sic: high quality homoepitaxy;Matsunami;Mater. Sci. Eng.: R: Rep.,1997

4. Drift mobility in 4H-SiC Schottky diodes;Via;Appl. Phys. Lett.,2005

5. Silicon carbide applications in power electronics;Locatelli;Power Electron. Semicond. Dev. (ISTE),2010

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2. Advanced approach of bulk (111) 3C-SiC epitaxial growth;Microelectronic Engineering;2024-01

3. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31

4. New Approaches and Understandings in the Growth of Cubic Silicon Carbide;Materials;2021-09-16

5. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100);Materials;2021-08-06
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