Drift mobility in 4H-SiC Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2081126
Reference19 articles.
1. Silicon carbide high-power devices
2. Theory of the electron mobility in n-type 6H–SiC
3. Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications
4. Low field electron mobility in 6H-SiC
5. Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC
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1. Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes;Solid State Phenomena;2024-08-23
2. Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature;Applied Physics Express;2021-06-01
3. Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion;Applied Physics Letters;2019-09-23
4. 3C-SiC grown on Si by using a Si1-xGex buffer layer;Journal of Crystal Growth;2019-08
5. Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop;IEEE Electron Device Letters;2019-07
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