Theory of the electron mobility in n-type 6H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370659
Reference12 articles.
1. Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide
2. Conductivity Anisotropy in Epitaxial 6H and 4H Sic
3. Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC
4. Calculations of the temperature and field dependent electronic mobility in β-SiC
5. Monte Carlo simulation of electron transport in 4H–SiC using a two‐band model with multiple minima
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