Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359670
Reference21 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
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