Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions
Author:
Affiliation:
1. School of ECEE, Arizona State University, Tempe, Arizona 85287-5706, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5144214
Reference28 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
3. Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes
4. An ensemble Monte Carlo study of high-field transport in β-SiC
5. Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors;Applied Physics Letters;2021-08-09
2. Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions;IEEE Transactions on Electron Devices;2020-09
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