Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors-Reference-Cited by-同舟云学术

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Published:2021-08-09 Issue:6 Volume:119 Page:063502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kleppinger Joshua W.¹,Chaudhuri Sandeep K.¹^ORCID,Karadavut OmerFaruk¹,Mandal Krishna C.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

Funder

DOE

ASPIRE-I

SPARC

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0064036

Reference51 articles.

1. Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

2. Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes

3. Silicon carbide detector for laser-generated plasma radiation

4. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

5. U.S. FUEL CYCLE TECHNOLOGIES R&D PROGRAM FOR NEXT GENERATION NUCLEAR MATERIALS MANAGEMENT

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