Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Abstract

Abstract Time response characteristics of α particle detector are crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carriers and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.