Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts-Reference-Cited by-同舟云学术

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

Published:2020-06-22 Issue:25 Volume:116 Page:252108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Taylor Neil R.¹²^ORCID,Yu Yongchao¹,Ji Mihee¹^ORCID,Aytug Tolga¹,Mahurin Shannon¹,Mayes Richard¹^ORCID,Cetiner Sacit¹^ORCID,Paranthaman M. Parans¹^ORCID,Ezell Dianne¹^ORCID,Cao Lei R.²^ORCID,Joshi Pooran C.¹^ORCID

Affiliation:

1. Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37830, USA

2. Nuclear Engineering, Department of Mechanical and Aerospace Engineering, The Ohio State University, 201 W. 19th Ave, Columbus, Ohio 43210, USA

Funder

Oak Ridge National Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0007496

Reference15 articles.

1. High temperature, harsh environment sensors for advanced power generation systems

2. Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review

3. SiC sensors: a review

4. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

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