High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
Author:
Affiliation:
1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA
Funder
DOE-NEUP
Office of the Vice President for Research, University of South Carolina
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0059151
Reference50 articles.
1. High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors
2. Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects
3. High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
4. Hard X-ray and γ-ray spectroscopy at high temperatures using a COTS SiC photodiode
5. Silicon Carbide Microstrip Radiation Detectors
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