Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects-Reference-Cited by-同舟云学术

Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects

Published:2020-09-21 Issue:11 Volume:128 Page:114501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chaudhuri Sandeep K.¹^ORCID,Kleppinger Joshua W.¹,Mandal Krishna C.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

Funder

DOE Office of Nuclear Energy's Nuclear Energy University Program

Advanced Support Program for Innovative Research Excellence-I, University of South Carolina

Support to Promote Advancement of Research and Creativity, University of South Carolina

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021403

Reference51 articles.

1. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2. Electrical and optical characterization of 4H-SiC diodes for particle detection

3. Silicon Carbide Microstrip Radiation Detectors

4. Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination

5. The fast neutron response of 4H silicon carbide semiconductor radiation detectors

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