From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction-Reference-Cited by-同舟云学术

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From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Published:2018-05 Issue: Volume:78 Page:57-68
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

La Via F.,Severino A.,Anzalone R.,Bongiorno C.,Litrico G.,Mauceri M.,Schoeler M.,Schuh P.,Wellmann P.

Funder

CHALLENGE project

STAEDTLER Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference155 articles.

1. Growth and application of cubic SiC

2. Silicon carbide: synthesis and processing

3. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

4. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

5. SiC devices: physics and numerical simulation

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2. Toward a Metal-Free Contact Based on Multilayer Epitaxial Graphene on 4H-SiC;IEEE Electron Device Letters;2024-07

3. Assessing innovative bulk (111) 3C-SiC epitaxial growth;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

4. Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate;Materials;2024-03-30

5. Multifunctional Ag-decorated core-shell heterojunction of red phosphorus/silicon carbide nanowires for highly sensitive SERS-based monitoring of ibrutinib;Surfaces and Interfaces;2024-03

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