Affiliation:
1. SiCrystal AG
2. Fairchild Semiconductor
3. TranSiC /Fairchild Semiconductor.
Abstract
We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
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2. K. Irmscher, M. Albrecht, M. Rossberg, H. -J. Rost, D. Siche and G. Wagner, Physica B Vol. 366-377 (2006), p.338.
3. T. Juhr, J. Liu, H.J. Chung, M. Skowronski and F. Szmulowicz, J. Appl. Phys. Vol. 92 (2002), p.5863.
Cited by
14 articles.
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