Threading dislocation increase in the initial stage of growth of nitrogen and boron co-doped 4H-SiC by physical vapor transport
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Bulk Growth of Large Area SiC Crystals
2. Development of RAF Quality 150mm 4H-SiC Wafer
3. Material science and device physics in SiC technology for high-voltage power devices
4. Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport
5. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Distribution of the electrical resistivity of a n-type 4H-SiC crystal;Journal of Crystal Growth;2024-09
2. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29
3. Computational Investigation of Stability and Molecular Properties of C18BN Corannulene Molecules;Russian Journal of Inorganic Chemistry;2022-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3