Affiliation:
1. Denso Corporation
2. SHOWA DENKO K.K.
3. TOYOTA CENTRAL R&D LABORATORIES,INC.
4. R&D Partnership for Future Power Electronics Technology
Abstract
We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the seed obtained from the block crystal, high quality 150mm 4H-SiC wafer was achieved. This paper reports the results of the quality evaluation.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
13 articles.
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