Distribution of the electrical resistivity of a n-type 4H-SiC crystal
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Elsevier BV
Reference37 articles.
1. Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals;Hu;J. Cryst. Growth,2024
2. T. Kimoto, J.A. Cooper. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications. 1st ed., Wiley. 2014. https://doi.org/10.1002/9781118313534.
3. Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules;Geng;J. Phys. Chem. C,2023
4. Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC;Li;ACS Appl. Electron. Mater.,2023
5. Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties;Roder;J. Appl. Crystallogr.,2023
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