Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy;Matsunami;Mater. Sci. Eng. R Rep.,1997
2. Commercial impact of silicon carbide;SIngh, M. PEchT;IEEE Ind. Electron. Mag.,2008
3. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals;Dudley;J. Phys. d: Appl. Phys.,1995
4. Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with Burgers vector c+ a;Dudley;Mater. Sci. Forum,2011
5. Effect of doping concentration variations in PVT-grown 4H-SiC wafers;Yang;J. Electron. Mater.,2016
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Distribution of the electrical resistivity of a n-type 4H-SiC crystal;Journal of Crystal Growth;2024-09
2. Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals;Defect and Diffusion Forum;2024-08-22
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