Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC-Reference-Cited by-同舟云学术

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Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC

Published:2023-05-05 Issue:5 Volume:5 Page:2664-2669
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Jiajun¹²,Wang Yazhe¹²,Zhu Ruzhong¹²,Pi Xiaodong¹²^ORCID,Yang Deren¹²,Wang Rong¹²^ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China

2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China

Funder

Ministry of Science and Technology of the People's Republic of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Pioneer and Leading Goose R&D Program of Zhejiang

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00137

Reference35 articles.

1. Fundamental research on semiconductor SiC and its applications to power electronics

2. Series Architecture on Hybrid Electric Vehicles: A Review

3. 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

4. A review on solid-state transformer: A breakthrough technology for future smart distribution grids

5. Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distribution of the electrical resistivity of a n-type 4H-SiC crystal;Journal of Crystal Growth;2024-09

2. First-principles calculation study on the effects of nitrogen on the bonding properties of SiC/Cu interface;Materials Today Communications;2024-08

3. Origins and characterization techniques of stress in SiC crystals: A review;Progress in Crystal Growth and Characterization of Materials;2024-02

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