Comparative study of the effect of van der Waals interactions on stacking fault energies in SiC
Author:
Affiliation:
1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0073402
Reference67 articles.
1. Review of Silicon Carbide Power Devices and Their Applications
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3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
5. Degradation of hexagonal silicon-carbide-based bipolar devices
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