Temperature-dependent stacking fault energies of 4H-SiC: A first-principles study
Author:
Affiliation:
1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Funder
Council for Science, Technology and Innovation
New Energy and Industrial Technology Development Organization
University of Tokyo
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5141029
Reference46 articles.
1. Review of Silicon Carbide Power Devices and Their Applications
2. Material science and device physics in SiC technology for high-voltage power devices
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
5. Degradation of hexagonal silicon-carbide-based bipolar devices
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3. Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC;RSC Advances;2024
4. Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion;Computational Materials Science;2024-01
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