Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC-Reference-Cited by-同舟云学术

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

Published:2024 Issue:38 Volume:14 Page:27778-27788
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jiang Shangting¹,Li Ye¹,Zhang Ye²,Chen Changchang³,Chen Zhiyong²,Zhu Weihua²,He Hongyu³⁴,Wang Xinlin¹³^ORCID

Affiliation:

1. School of Nuclear Science and Technology, University of South China, Hengyang, Hunan, China

2. School of Electrical Engineering, University of South China, Hengyang, Hunan, China

3. Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, College of Mechanical Engineering, University of South China, Hengyang, Hunan, China

4. School of Electronics Information and Electrical Engineering, Yangtze University, Jingzhou, China

Abstract

Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature and radiation-rich environments due to its excellent thermal conductivity and radiation resistance. Shockley-type stacking faults serve as one of the factors influencing the radiation resistance of 4H-SiC.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA04424J

Reference62 articles.

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4. Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study

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