Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/3/037104/pdf
Reference31 articles.
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3. The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC;AIP Advances;2022-06-01
4. Improvement of Interfacial Properties of 4H-SiC/SiO2 by Nitrogen Plasma Treatment;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06
5. Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC;Journal of Physics and Chemistry of Solids;2020-07
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