Thermal expansion of 4H and 6H SiC from 5 K to 340 K
Author:
Funder
Office of Science
Basic Energy Sciences
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of chain configuration and stoichiometry on the behavior of boron carbide from first-principle calculations;Materials Today Communications;2024-08
2. SiC Material Properties;SiC Technology;2024
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