Author:
Speer Kevin,Sharma Yogesh,Maximenko Sergey,Di Giovanni Filippo,Bollina Ravi,Gemmill William,Knight Terry,Jentgens Christian,Willers Helge
Publisher
Springer Nature Switzerland
Reference52 articles.
1. K. M. Speer, The Silicon Carbide Vacuum Field-Effect Transistor (VacFET), Doctoral dissertation, Case Western Reserve University. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1301445437 (2011)
2. J.M.A. Beattie, J.P. Goss, M.J. Rayson, P.R. Briddon, Structure and electron affinity of the 4H-SiC (0001) surfaces: A methodological approach for polar systems. J. Phys. Condens. Matter 33(16), 165003 (2021). https://doi.org/10.1099/1361-648X/abf0be
3. O. Madelung, Semiconductors: Data Handbook, 3rd edn. (New York/Berlin/Heidelberg, Springer, 2003)
4. T. Kimoto, J.A. Cooper, Fundamentals of Silicon Carbide Technology (Wiley, Singapore, 2014)
5. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, Properties of Advanced Semiconductor Materials (Wiley, New York, 2001)