Affiliation:
1. University of South Carolina
Abstract
SiC epitaxial films grown in an inverted chimney CVD reactor using silane-propane-hydrogen and dichlorosilane (DCS)-propane-hydrogen systems are compared for growth rates and doping concentrations at various growth pressures. Parasitic depositions in the gas injector tube using these precursor gases are also compared for precursor depletion. Virtual Reactor, a commercial software, is employed to predict growth rates and compare them to experimental results for the same growth conditions using DCS and silane gases.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
8 articles.
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