Author:
Chowdhury Iftekhar,Chandrasekhar M.V.S.,Klein Paul B.,Caldwell Joshua D.,Sudarshan Tangali
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. 10kV, 123mΩcm2 4H-SiC power DMOSFETs;Ryu;IEEE Electron Device Letters,2004
2. Fabrication and characterization of 11kV normally off 4H-SiC trenched-and-implanted vertical junction FET;Zhao;IEEE Electron Device Letters,2004
3. M.K. Das, J.J. Sumakeris, B.A. Hull, J. Richmond, S. Krishnaswami, A.R. Powell, Drift-free, 50A, 10kV 4H-SiC PiN diodes with improved device yields, in: Proceedings of the ECSCRM Conference, 2004.
4. Demonstration of the first 10kV 4H-SiC Schottky barrier diodes;Zhao;IEEE Electron Device Letters,2003
5. 4H SiC epitaxial growth with chlorine addition;la Via;Chemical Vapor Deposition,2006
Cited by
44 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献