4H SiC Epitaxial Growth with Chlorine Addition-Reference-Cited by-同舟云学术

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4H SiC Epitaxial Growth with Chlorine Addition

Published:2006-09 Issue:8-9 Volume:12 Page:509-515
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

La Via F.,Galvagno G.,Foti G.,Mauceri M.,Leone S.,Pistone G.,Abbondanza G.,Veneroni A.,Masi M.,Valente G. L.,Crippa D.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.200506465/fullpdf

Reference14 articles.

1. Silicon carbide benefits and advantages for power electronics circuits and systems

2. Crystal growth of SiC by step-controlled epitaxy

3. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

4. Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FET

5. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

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1. Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method;Materials Science in Semiconductor Processing;2024-06

2. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29

3. Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers;physica status solidi (b);2024-02-10

4. Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors;Sensors;2023-07-19

5. The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers;Crystals;2023-06-10

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