First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments-Reference-Cited by-同舟云学术

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Published:2021-07-26 Issue:8 Volume:60 Page:085503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chokawa Kenta^ORCID,Daigo Yoshiaki,Mizushima Ichiro,Yoda Takashi,Shiraishi Kenji^ORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac1127/pdf

Reference42 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

3. Bulk and epitaxial growth of silicon carbide

4. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

5. Epitaxial growth of SiC in a chimney CVD reactor

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth;Applied Physics Express;2024-08-01

2. Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers;Micromachines;2024-05-21

3. Theoretical study of the gas-phase reaction of hexachlorodisilane by thermodynamic analysis and kinetics calculation;Japanese Journal of Applied Physics;2024-01-04

4. High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system;Surface and Coatings Technology;2023-09

5. Comparative study of the gas phase reaction of SiCl₄, SiHCl₃, SiH₂Cl₂, and SiH₃Cl by thermodynamic analysis;Japanese Journal of Applied Physics;2023-04-01