High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system-Reference-Cited by-同舟云学术

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High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system

Published:2023-09 Issue: Volume:468 Page:129741
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Huang Wei,Wang Junjun,Qingfang Xu,Yang Meijun,Liu Kai,Peng Jian,Wang Chuanbin,Tu Rong,Zhang Song

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference50 articles.

1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies;Morkoç;J. Appl. Phys.,1994

2. Silicon Carbide Prepared by Chemical Vapor Deposition;Hirai,1991

3. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

4. Growth of 6H-SiC on CVD-grown 3C-SiC substrates;Yoo;MRS Proc.,2011

5. Tailoring the mechanical properties of high-aspect-ratio carbon nanotube arrays using amorphous silicon carbide coatings;Poelma;Adv. Funct. Mater.,2014

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