High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system-Reference-Cited by-同舟云学术

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High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system

Published:2024-03 Issue: Volume:38 Page:108054
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Zhang Chitengfei,Lu Pengjian,Qiu Wei,Kuang Xiaoxu,Tu Rong,Zhang Song

Publisher

Elsevier BV

Reference50 articles.

1. Wide bandgap semiconductor-based power electronics for aviation;Chen;IEEE Power Electron. Mag.,2022

2. Performance limits of vertical unipolar power devices in GaN and 4H-SiC;Cooper;IEEE Electron Device Lett.,2020

3. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices;Shi;Adv. Mater.,2021

4. Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials;Wu;Mater. Today Nano,2020

5. Ultra-wide bandgap semiconductor Ga2O3 power diodes;Zhang;Nat. Commun.,2022

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1. A review on synthesis and applications of gallium oxide materials;Advances in Colloid and Interface Science;2024-06

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