Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=3/a=030304/pdf
Reference20 articles.
1. Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films
2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
3. Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy
4. Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy
5. Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4 ) precursor for high quality thick silicon carbide (SiC) homoepitaxy
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2. Perspective—Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC;ECS Journal of Solid State Science and Technology;2020-10-15
3. Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV;ACS Applied Electronic Materials;2019-12-10
4. Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate;Japanese Journal of Applied Physics;2019-07-22
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