Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Baliga B. Jayant , Fundamentals of Power Semiconductor Devices, Springer, New York, (2008).
2. Harris G. L. , Properties of Silicon Carbide, INSPEC, London, (1995).
3. Vapour phase growth of epitaxial silicon carbide layers
4. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
5. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing<sup>®</sup>;Defect and Diffusion Forum;2024-08-22
2. Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis;Journal of Applied Physics;2024-03-01
3. Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching;Crystals;2022-05-30
4. Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition;Journal of Crystal Growth;2018-12
5. Supported ionic liquid-like phases based on CMS/DVB with different NR3 cations as catalysts for the chlorosilanes disproportionation;Applied Catalysis B: Environmental;2018-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3