Vapour phase growth of epitaxial silicon carbide layers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference93 articles.
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4. Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane;ECS Journal of Solid State Science and Technology;2014-12-31
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