Affiliation:
1. Université François Rabelais
2. Centre de Recherche sur l'Hétéroépitaxie et ses Applications (CRHEA), CNRS
3. NOVASiC
Abstract
We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two distinct growth regimes. The defects in the films were found to be antiphase boundaries and μ-twins. The influence of the growth parameters as well as the 3CSiC structural properties on these defects are discussed. The impact of a subsequent thermal annealing, under different gas environments, is also investigated and reveals some noticeable differences according to the gas environment used in the annealing process.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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