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Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

  • Published:2015-12 Issue: Volume:160 Page:28-30
  • ISSN:0167-577X
  • Container-title:Materials Letters
  • language:en
  • Short-container-title:Materials Letters

Author:

Khazaka Rami,Bahette Emilie,Portail Marc,Alquier Daniel,Michaud Jean-François

Funder

Region Centre

Conseil General d’Indre et Loire

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Silicon Carbide Electronic Devices in Encyclopedia of Materials: Science and Technology;Neudeck,2001

3. Silicon Carbide Overview in Advances in Silicon Carbide Processing and Applications;Kordina,2004

4. Evidence of electrical activity of extended defects in 3C–SiC grown on Si

5. Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

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