Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363453
Reference28 articles.
1. Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/
4. Epitaxial growth and electric characteristics of cubic SiC on silicon
5. Effect of Carbonization Gas Precursor on the Heteroepitaxial Growth of Sic-on-Si by Rtcvd
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