Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125512
Reference12 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
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3. 3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering
4. Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition
5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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