3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

Abstract

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.