Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films-Reference-Cited by-同舟云学术

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Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films

Published:1989-12 Issue:1-2 Volume:181 Page:1-15
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Davis Robert F

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Progress in Crystal Growth and Characterization,1983

2. Hot electron microwave conductivity of wide bandgap semiconductors

3. A High-Temperature Semiconductor;Skace,1960

4. Thermal conductivity and electrical properties of 6Hsilicon carbide

5. A High-Temperature Semiconductor;Phillipp,1960

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2. Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111);Physics of the Solid State;2019-12

3. Using a functional C84 monolayer to improve the mechanical properties and alter substrate deformation;RSC Advances;2015

4. Epitaxial Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

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