In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(100) surface-Reference-Cited by-同舟云学术

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In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(100) surface

Published:2012-01 Issue:6 Volume:258 Page:2201-2205
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jee Hae-geun,Nam Sang-Hun,Boo Jin-Hyo,Kim Seong Kyu,Lee Soon-Bo

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films

2. Layer-by-layer growth of SiC at low temperatures

3. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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