SiC/Si-dots multilayer structures formed by supersonic free jets of CH[sub 3]SiH[sub 3] and Si[sub 3]H[sub 8]
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control;Seventh International Conference on Thin Film Physics and Applications;2010-10-11
3. Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100);Seventh International Conference on Thin Film Physics and Applications;2010-10-11
4. Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets;Thin Solid Films;2010-05
5. Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices;Thin Solid Films;2008-06
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