Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
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2. Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H2-CH4-SiH4 mixtures: Optical emission spectroscopy study;Journal of Vacuum Science & Technology A;2021-03
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