Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H2-CH4-SiH4 mixtures: Optical emission spectroscopy study-Reference-Cited by-同舟云学术

Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H2-CH4-SiH4 mixtures: Optical emission spectroscopy study

Published:2021-03 Issue:2 Volume:39 Page:023002
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Yurov V. Yu.¹²^ORCID,Ralchenko V. G.¹²³,Martyanov A. K.¹,Antonova I. A.¹²,Sedov V. S.¹,Khomich A. A.¹⁴,Voronov V. V.¹,Savin S. S.⁵,Shevchenko M. Y.¹,Bolshakov A. P.¹

Affiliation:

1. Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov Str. 38, Moscow 119991, Russia

2. National Research Nuclear University MEPhI, 31 Kashirskoye Shosse, Moscow 115409, Russia

3. Harbin Institute of Technology, 92 Xidazhi Str., 150001 Harbin, People’s Republic of China

4. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Vvedensky Sq. 1, 141190 Fryazino, Russia

5. MIREA—Russian Technological University, 78 Vernadsky Avenue, Moscow 119454, Russia

Funder

Russian Fund for Basic Researches

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0000745

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