Affiliation:
1. The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610000, China
2. China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang 550000, China
Abstract
In this study, we propose a novel silicon (Si)/silicon carbide (4H−SiC) heterojunction vertical double−diffused MOSFET with an electron tunneling layer (ETL) (HT−VDMOS), which improves the specific on−state resistance (RON), and examine the hetero−transfer mechanism by simulation. In this structure, the high channel mobility and high breakdown voltage (BV) are obtained simultaneously with the Si channel and the SiC drift region. The heavy doping ETL on the 4H−SiC side of the heterointerface leads to a low heterointerface resistance (RH), while the RH in H−VDMOS is extremely high due to the high heterointerface barrier. The higher carrier concentration of the 4H−SiC surface can significantly reduce the width of the heterointerface barrier, which is demonstrated by the comparison of the conductor energy bands of the proposed HT−VDMOS and the general Si/SiC heterojunction VDMOS (H−VDMOS), and the electron tunneling effect is significantly enhanced, leading to a higher tunneling current. As a result, a significantly improved trade−off between RON and BV is achieved. With similar BV values (approximately 1525V), the RON of the HT−VDMOS is 88% and 65.75% lower than that of H−VDMOS and the conventional SiC VDMOS, respectively.
Funder
Major Science and Technology Program of Anhui Province
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Reference21 articles.
1. Baliga, B.J. (2005). Silicon Carbide Power Devices, World Scientific.
2. Current Sharing Behavior in Si IGBT and SiC MOSFET Cross–Switch Hybrid;Minamisawa;IEEE Electron Device Lett.,2016
3. Ionization rates and critical fields in 4H silicon carbide;Konstantinov;Appl Phys Lett.,1997
4. Kimoto, T., and Cooper, J.A. (2014). Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications, Wiley.
5. Threshold Voltage Instability in 4H–SiC MOSFETs with Phosphorus–Doped and Nitrided Gate Oxides;Yano;IEEE Trans. Electron Devices,2015
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献