Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

Abstract

In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.