Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Superconductivity in Boron-doped SiC
2. Specific heat and electronic states of superconducting boron-doped silicon carbide
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4. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition
5. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
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