Analysis of carrier lifetimes in N + B-doped n-type 4H-SiC epilayers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Analysis of carrier lifetimes in N + B-doped n-type 4H-SiC epilayers

Published:2019-08-07 Issue:5 Volume:126 Page:055103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yang A.¹^ORCID,Murata K.¹^ORCID,Miyazawa T.¹,Tawara T.²³,Tsuchida H.¹

Affiliation:

1. Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

2. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

3. Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5097718

Reference42 articles.

1. Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTs

2. Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

4. Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC

5. Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

2. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode;Results in Physics;2024-07

3. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15

4. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

5. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes;Materials;2023-04-25

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3