Affiliation:
1. University of Tokyo
2. Japan Aerospace Exploration Agency
3. The University of Tokyo
Abstract
Anomalous expansion of stacking faults (SFs) induced in 4H-SiC under electronic excitations is driven by an electronic force and is achieved by enhanced glide of partial dislocations. An experimental attempt to separate the two physically different effects has been made by conducting photoluminescence (PL) mapping experiments which allowed simultaneous measurements of partial dislocation velocity and SF-originated PL intensity the latter of which is proposed to be related to the driving force for SF expansion through the density of free excitons planarly confined in the SF.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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