Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes-Reference-Cited by-同舟云学术

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

Published:2023-04-25 Issue:9 Volume:16 Page:3347
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Knezevic Tihomir¹^ORCID,Jelavić Eva²,Yamazaki Yuichi³,Ohshima Takeshi³^ORCID,Makino Takahiro³,Capan Ivana¹^ORCID

Affiliation:

1. Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia

2. Faculty of Science, University of Zagreb, Bijenička 32, 10000 Zagreb, Croatia

3. National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan

Abstract

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 1015 cm−3. Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.

Funder

NATO Science for Peace and Security Programme

Publisher

MDPI AG

Subject

General Materials Science

Link

https://www.mdpi.com/1996-1944/16/9/3347/pdf

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