Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC-Reference-Cited by-同舟云学术

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Published:2020-09 Issue: Volume:478 Page:224-228
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Capan Ivana,Brodar Tomislav,Yamazaki Yuichi,Oki Yuya,Ohshima Takeshi,Chiba Yoji,Hijikata Yasuto,Snoj Luka,Radulović Vladimir

Funder

European Union’s Horizon 2020 Research and Innovation Programme

European Union through the European Regional Development Fund

The Competitiveness and Cohesion Operational Programme

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference40 articles.

2. High speed switching devices in 4H-SiC – performance and reliability;Ryu,2005

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